- 您现在的位置：买卖IC网 > Sheet目录126 > CDBFR0230R (Comchip Technology)DIODE SCHOTTKY 200MA 30V 1005
       CDBFR0230R Page 1 QW-A1069 REV:B A mA V V 1 200 30 35 IO VR VRRM IFSM 8.3ms single half sine-wave superimposed on rate load(JEDEC method) O C O C +125 +125 -40 TSTG Tj Storage temperature Junction temperature Average forward current Reverse voltage Repetitive peak reverse voltage Forward current,surge peak Parameter Conditions Symbol Min Typ Max Unit uA V 1 0.6 IR VF Reverse current Forward voltage Parameter Conditions Symbol Min Typ Max Unit VR = 1 0 V IF = 2 00 mA 5 O C unless otherwise noted) Maximum Rating (at TA=2 5 O C unless otherwise noted) Electrical Characteristics (at TA=2 0.102(2.60) 0.095(2.40) 0.051(1.30) 0.043(1.10) 0.035(0.90) 0.027(0.70) Dimensions in inches and (millimeter) 0.020(0.50) Typ. 0.040(1.00) Typ. Comchip Technology CO., LTD. SMD Schottky Barrier Diode 1005/SOD-323F Features - Low reverse current. - Designed for mounting on small surface. - Extremely thin / leadless package. - Majority carrier conduction. Mechanical data - Case: 1005/SOD-323F standard package m olded plastic. - Terminals: Gold plated, solderable per M IL-STD-750,method 2026. - Marking code: cathode band & BB - Mounting position: Any - Weight: 0.006 gram(approx.). Io = 2 00 mA VR = 3 0 Volts RoHS Device |